Defect Control in Semiconductors

Volume 1. Parts: I. General (12 papers). II. Silicon (7 papers). Sections: Grown-in Defects (7 papers). Oxygen-Related Defects (13 papers). Metallic Impurities and Gettering (9 papers). Defect Reactions and Passivation (20 papers). Defects Induced by Ion-implantation or Dry Etching (11 papers). Irradiation-induced Defects (7 papers). Defect Control and Device Performance (10 papers). III. Bulk Compounds. Grown-in Defects in III-V Compounds (11 papers). Native Defects and Impurities in III-V Compounds (9 papers). Defects Control through Thermal Treatments and Defect Passivation (15 papers). Defects Induced by Ion-implantation and Particle-irradiation (9 papers). Volume 2. IV. Thin Layers and Heterostructure. Defects in II-VI Compounds (7 papers). Native Defects and Impurities (10 papers). DX Center (6 papers). Structural Defects in Alloy Semiconductors (3 papers). Defects Associated with Heteroepitaxy (18 papers). Defects in Quantum Wells and Superlattices (6 papers). Defects and Device Performance (7 papers). Defect Control (8 papers). V. Dislocations and Deformation-Induced Defects. Dislocation Dynamics (9 papers). Electronic State (13 papers). VI. Defect Characterization (17 papers). VII. Organic Crystals. Structural Defects (9 papers). Electronic Defects (8 papers). Subject index. Author index.