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Elsevier

Effect of Disorder and Defects in Ion-Implanted Semiconductors: Optical and Photothermal Characterization

  • 1 Edición, Volumen 46 - 12 de junio de 1997
  • Última edición
  • Editores: Constantinos Christofides, R. K. Willardson, Eicke R. Weber, Gerard Ghibaudo
  • Idioma: Inglés

Defects in ion-implanted semiconductors are important and will likely gain increased importance as annealing temperatures are reduced with successive IC generations. Novel implant… Leer más

Descripción

Defects in ion-implanted semiconductors are important and will likely gain increased importance as annealing temperatures are reduced with successive IC generations. Novel implant approaches, such as MdV implantation, create new types of defects whose origin and annealing characteristics will need to be addressed. Publications in this field mainly focus on the effects of ion implantation on the material and the modification in the implanted layer after high temperature annealing. The editors of this volume and Volume 45 focus on the physics of the annealing kinetics of the damaged layer. An overview of characterization tehniques and a critical comparison of the information on annealing kinetics is also presented.

Puntos claves

  • Provides basic knowledge of ion implantation-induced defects
  • Focuses on physical mechanisms of defect annealing
  • Utilizes electrical, physical, and optical characterization tools for processed semiconductors
  • Provides the basis for understanding the problems caused by the defects generated by implantation and the means for their characterization and elimination

De interès para

Researchers, graduate students, and professionals dealing with semiconductors; materials scientists; electrical engineers; engineers and physicists working in microelectronics

Índice

Optical Characterization
M Fried, T. Lohner, and J. Gyulai, Ellipsometric Analysis
A. Seas and C. Christofides, Transmission and Reflection Spectoscopy on Ion Implanted Semiconductors
A. Othonos, Photoluminescence and Raman Scattering of Ion Implanted Semiconductors: Influence of Annealing

Thermal Wave Analyses
C. Cristofides, Photomodulated Thermoreflectance Investigation of Implanted Wafers: Annealing Kinetics of Defects
U. Zammit, Photothermal Delection Spectroscopy Characterization of Ion-Implanted and Annealed Si Films
A. Mandelis, A. Budiman, and M. Vargas, Photothermal Deep Level Transient Spectroscopy of Impurities and Defects in Semiconductors

Quantum Well Structures and Compound Systems
R. Kalish and S. Charbonneau, Ion Implantation into Quantum Well Structures
A.M. Myasnikov and N.N. Gerasimenko, Ion Implantation and Thermal Annealing of III-V Compound Semiconducting Systems: Some Problems of III-V Narrow Gap Semiconductors

Detalles del producto

  • Edición: 1
  • Última edición
  • Volumen: 46
  • Publicado: 20 de julio de 2011
  • Idioma: Inglés

Sobre los editores

CC

Constantinos Christofides

Afiliaciones y experiencia
University of Cyprus

RW

R. K. Willardson

Afiliaciones y experiencia
WILLARDSON CONSULTING SPOKANE, WASHINGTON

EW

Eicke R. Weber

Afiliaciones y experiencia
Fraunhofer-Institut für Solare Energiesysteme ISE, Freiburg, Germany

GG

Gerard Ghibaudo

Afiliaciones y experiencia
Labaratoire de Physique des Composants a Semiconducteur

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