Gallium Nitride-Based Materials and Chips Epitaxially Grown on a Silicon Substrate
- 1 Edición - 1 de noviembre de 2026
- Última edición
- Autor: Guoqiang Li
- Idioma: Inglés
Gallium nitride (GaN) is a wide bandgap semiconductor with significant applications in optoelectronic and high-power electronic devices. The epitaxial growth of GaN on silicon (Si)… Leer más
Descripción
Descripción
Gallium nitride (GaN) is a wide bandgap semiconductor with significant applications in optoelectronic and high-power electronic devices. The epitaxial growth of GaN on silicon (Si) substrates is of great interest due to the low cost, large wafer size, good thermal conductivity, and compatibility with established Si device technology. Gallium Nitride-Based Materials and Chips Epitaxially Grown on a Silicon Substrate reviews research on developing high-performance semiconductor materials and chips using gallium nitride-based materials. In particular the book, firstly, describes a novel, two-step growth method that combines low-temperature epitaxy by pulsed laser deposition (PLD) with high-temperature epitaxy by metal-organic chemical vapor deposition (MOCVD)/molecular beam epitaxy (MBE). This method effectively controls the stress of Si-based GaN epitaxial materials and significantly reduces the defect density of the epitaxial materials by three orders of magnitude. Secondly, in terms of chip structure design, the book describes a variety of Si-based GaN chips with novel heteroepitaxial structures, leading to the improved the efficiency of various chips such as light-emitting diode (LED) chips, high-electron-mobility transistors, Schottky diodes, photodetector chips, photoelectrochemical water-splitting chips, and Si-based GaN integrated chips. Finally, the book describes novel chip fabrication processes which greatly improve the performance and production efficiency of various chips by more than 30%.
Puntos claves
Puntos claves
- Reviews the developing high-performance semiconductor materials and chips using GaN or gallium nitride-based materials and chips epitaxially grown on a silicon substrate
- Discusses techniques which effectively control the stress of the GaN epitaxial materials on Si substrates, leading to reduce the defect density of epitaxial materials
- Outlines the fabrication of GaN chip structure epitaxial grown on Si substrate and modifications to several sets of key equipment for chip fabrication, thereby improving the production efficiency of various chips
De interès para
De interès para
Professionals and researchers in the fields of GaN-based material epitaxy, optoelectronic/electronic devices, and their applications
Índice
Índice
1. Research Significance of GaN Materials and Chips Epitaxial Grown on Si Substrate
1.1 Classification of Semiconductor Materials
1.2 Structure and Properties of GaN
1.3 Difficulties in GaN Preparation
1.4 GaN Materials and Chips Epitaxial Grown on Si Substrate Reference
2. Epitaxial Growth of GaN Materials on Si Substrate
2.1 Epitaxial growth of GaN thin films on Si substrate
2.1.1 Scientific and technological challenges in the growth of GaN thin films epitaxial grown on Si substrate
2.1.2 Basic Model for GaN Thin Film Growth
2.1.3 Lateral Epitaxial Overgrowth
2.1.4 Insertion Layer Technology
2.1.5 Low Temperature growth Technology
2.1.6 Stress Compensation Technology
2.2 Growth Technology of Zero Dimensional GaN Quantum Dots on Si Substrate
2.2.1 Advantages and Growth Difficulties of GaN Quantum Dots on Si Substrate
2.2.2 Buffer Layer Growth Technology
2.2.3 Self-organizing Growth Technology
2.2.4 Selective Growth Technology
2.3 Growth Techniques of One Dimensional GaN Nanowires on Si Substrate
2.3.1 Advantages and Growth Difficulties of One-dimensional GaN Nanowires
2.3.2 Catalyst Assisted Growth Technology
2.3.3 Mask Method Selective Growth Technology
2.3.4 Self Assembling Growth Technology
2.4 Growth Technology of Two Dimensional GaN on Si substrate
2.4.1 Advantages and growth difficulties of two-dimensional GaN
2.4.2 Migration Enhancement Technology for Graphene Encapsulation
2.4.3 Template Technology
2.4.4 Surface Restricted Growth Technology Reference
3. GaN LED Materials and Chips Epitaxial Grown on Si substrate
3.1 Introduction
3.2 Working Principle of GaN LED chip
3.3 Development Significance of GaN LED materials on Si Substrate
3.3.1 Advantages of GaN LEDs Epitaxial Grown on Si substrate
3.3.2 Bottlenecks Faced by GaN LEDs Epitaxial Grown on Si substrate
3.4 Growth and Optimization of GaN LED Materials Epitaxial Grown on Si Substrate
3.4.1 V-shaped Pit Control Technology
3.4.2 Superlattice Stress Release Layer
3.4.3 Optimization of InGaN/GaN Multiple Quantum Wells
3.4.4 Electron blocking layer
3.4.5 Design of p-type GaN
3.5 Preparation process of high-power GaN LED chip Epitaxial Grown on Si Substrate
3.5.1 Comparison of Various Structural Properties
3.5.2 Process Flow of GaN LED Chips Epitaxial Grown on Si Substrate
3.5.3 Segmentation Line Electrode Technology
3.5.4 Three dimensional through-hole electrode technology
3.5.5 Current blocking layer
3.5.6 Mirror Structure
3.5.7 Metal Bonding
3.5.8 Laser Stripping Technology
3.5.9 Surface roughening
3.6 Application and Development Trends of GaN LED Chips Epitaxial Grown on Si Substrate
3.6.1 Lighting and Its Development Trends
3.6.2 Micro/Mini LED and Full Color Display
3.6.3 UV LED Epitaxial Grown on Si Substrate
3.6.4 Visible Light Communication Applications and Development Trends Reference
4. GaN High Electron Mobility Transistors Epitaxial Grown on Si Substrate
4.1 Introduction
4.2 Working principle and preparation process of GaN HEMT chip
4.2.1 GaN Heterojunction and Its Polarization Effect
4.2.2 Working principle of GaN HEMT chip
4.2.3 Basic Process Technology of GaN HEMT Chips
4.3 Classification and Application of GaN HEMT Chips
4.3.1 Depleted GaN HEMT Chip
4.3.2 Enhanced GaN HEMT Chip
4.3.3 Performance Parameters of GaN HEMT Chips
4.4 GaN HEMT chip performance improvement technology on Si Substrate
4.4.1 Difficulties faced in improving the performance of GaN HEMT chips Epitaxial Grown on Si Substrate
4.4.2 Heteroepitaxial Structure Control Technology
4.4.3 Key Technologies of GaN HEMT Chips Epitaxial Grown on Si Substrate
4.5 Application and Development Trends of GaN HEMT Chips on Epitaxial Grown on Si Substrate
4.5.1 Application and Development Trends of Power Electronics
4.5.2 RF Applications and Development Trends Reference
5. GaN Schottky diode Epitaxial Grown on Si Substrate
5.1 Introduction
5.2 Principle and Performance Parameters of GaN SBD Epitaxial Grown on Si Substrate
5.2.1 Working Principle
5.2.2 Performance Parameters
5.3 Performance Control of GaN SBD Chips Epitaxial Grown on Si Substrate
5.3.1 Advantages and Bottlenecks of GaN SBD Chips Epitaxial Grown on Si Substrate
5.3.2 GaN SBD Chip Structure Design Epitaxial Grown on Si Substrate
5.3.3 Key Processes of GaN SBD Epitaxial Grown on Si Substrate
5.4 Application and Development Trends of GaN SBD Epitaxial Grown on Si Substrate
5.4.1 Power Management
5.4.2 RF Front End
5.4.3 Development Trends Reference
6. GaN Photodetector Chip Epitaxial Grown on Si Substrate
6.1 Introduction
6.2 Working Principle and Preparation Process of GaN Photodetector Chip Epitaxial Grown on Si Substrate
6.2.1 Working Principle of GaN Photodetector Chip Epitaxial Grown on Si Substrate
6.2.2 Performance Parameters of GaN Photodetector Chip Epitaxial Grown on Si Substrate
6.2.3 Preparation Process of GaN Photodetector Chip Epitaxial Grown on Si Substrates
6.3 Performance Control Technology for GaN Photodetector Chip Epitaxial Grown on Si Substrates 6.3.1 Bottlenecks Faced by GaN Photodetector Chip Epitaxial Grown on Si Substrates
6.3.2 Local Surface Plasmon Resonance Technology
6.3.3 New Heterojunction Technology
6.3.4 Low Dimensional Nanomaterial Technology
6.4 Application of GaN Photodetector Chip Epitaxial Grown on Si Substrate
6.4.1 Optical Communication
6.4.2 Optical Imaging Reference
7. GaN Photoelectrolysis Chip Epitaxial Grown on Si Substrates
7.1 Introduction
7.2 Working Principle and Structural Parameters of GaN Photoelectrode Water Chip Epitaxial Grown on Si Substrates
7.2.1 Working Principle of Photoelectric Water Splitting Chip
7.2.2 Structure of GaN Photoelectrode Water Chip Epitaxial Grown on Si Substrate
7.2.3 Performance Parameters of GaN Photoelectrode Water Chip Epitaxial Grown on Si Substrate
7.3 Development Significance of GaN Photoelectrochemical Water Splitting Chip Epitaxial Grown on Si Substrate
7.3.1 Advantages of GaN Photoelectrochemical Water Splitting Chip on Si Substrate
7.3.2 Bottlenecks Faced by GaN Photoelectrolysis Chips on Si Substrate
7.4 Preparation and Performance of GaN Photoelectrolysis Chips on Si Substrate
7.4.1 Preparation Process of GaN Photoelectrode Water Chips on Si Substrate
7.4.2 Low Mismatch Epitaxial Technology
7.4.3 Doping Engineering
7.4.4 Heterojunction Engineering
7.4.5 Surface Modification Technology Application of
7.5 GaN Photoelectrode Water Chip Epitaxial Grown on Si Substrate
7.5.1 Decomposition of Pollutants
7.5.2 Seawater Electrolysis
7.5.3 Pv-Pec Coupling Reference
8. GaN Integrated Chips on Si Substrate
8.1 Introduction
8.2 Working Principle and Process of GaN Integrated Chips on Si Substrate
8.3 Advantages and Applications of GaN Integrated Chips on Si Substrate
8.3.1 GaN Digital Chips Integrated on Si Substrate
8.3.2 GaN Simulation Chips Integrated on Si Substrate
8.4 Development Trends of GaN Integrated Chips on Si Substrate References
1.1 Classification of Semiconductor Materials
1.2 Structure and Properties of GaN
1.3 Difficulties in GaN Preparation
1.4 GaN Materials and Chips Epitaxial Grown on Si Substrate Reference
2. Epitaxial Growth of GaN Materials on Si Substrate
2.1 Epitaxial growth of GaN thin films on Si substrate
2.1.1 Scientific and technological challenges in the growth of GaN thin films epitaxial grown on Si substrate
2.1.2 Basic Model for GaN Thin Film Growth
2.1.3 Lateral Epitaxial Overgrowth
2.1.4 Insertion Layer Technology
2.1.5 Low Temperature growth Technology
2.1.6 Stress Compensation Technology
2.2 Growth Technology of Zero Dimensional GaN Quantum Dots on Si Substrate
2.2.1 Advantages and Growth Difficulties of GaN Quantum Dots on Si Substrate
2.2.2 Buffer Layer Growth Technology
2.2.3 Self-organizing Growth Technology
2.2.4 Selective Growth Technology
2.3 Growth Techniques of One Dimensional GaN Nanowires on Si Substrate
2.3.1 Advantages and Growth Difficulties of One-dimensional GaN Nanowires
2.3.2 Catalyst Assisted Growth Technology
2.3.3 Mask Method Selective Growth Technology
2.3.4 Self Assembling Growth Technology
2.4 Growth Technology of Two Dimensional GaN on Si substrate
2.4.1 Advantages and growth difficulties of two-dimensional GaN
2.4.2 Migration Enhancement Technology for Graphene Encapsulation
2.4.3 Template Technology
2.4.4 Surface Restricted Growth Technology Reference
3. GaN LED Materials and Chips Epitaxial Grown on Si substrate
3.1 Introduction
3.2 Working Principle of GaN LED chip
3.3 Development Significance of GaN LED materials on Si Substrate
3.3.1 Advantages of GaN LEDs Epitaxial Grown on Si substrate
3.3.2 Bottlenecks Faced by GaN LEDs Epitaxial Grown on Si substrate
3.4 Growth and Optimization of GaN LED Materials Epitaxial Grown on Si Substrate
3.4.1 V-shaped Pit Control Technology
3.4.2 Superlattice Stress Release Layer
3.4.3 Optimization of InGaN/GaN Multiple Quantum Wells
3.4.4 Electron blocking layer
3.4.5 Design of p-type GaN
3.5 Preparation process of high-power GaN LED chip Epitaxial Grown on Si Substrate
3.5.1 Comparison of Various Structural Properties
3.5.2 Process Flow of GaN LED Chips Epitaxial Grown on Si Substrate
3.5.3 Segmentation Line Electrode Technology
3.5.4 Three dimensional through-hole electrode technology
3.5.5 Current blocking layer
3.5.6 Mirror Structure
3.5.7 Metal Bonding
3.5.8 Laser Stripping Technology
3.5.9 Surface roughening
3.6 Application and Development Trends of GaN LED Chips Epitaxial Grown on Si Substrate
3.6.1 Lighting and Its Development Trends
3.6.2 Micro/Mini LED and Full Color Display
3.6.3 UV LED Epitaxial Grown on Si Substrate
3.6.4 Visible Light Communication Applications and Development Trends Reference
4. GaN High Electron Mobility Transistors Epitaxial Grown on Si Substrate
4.1 Introduction
4.2 Working principle and preparation process of GaN HEMT chip
4.2.1 GaN Heterojunction and Its Polarization Effect
4.2.2 Working principle of GaN HEMT chip
4.2.3 Basic Process Technology of GaN HEMT Chips
4.3 Classification and Application of GaN HEMT Chips
4.3.1 Depleted GaN HEMT Chip
4.3.2 Enhanced GaN HEMT Chip
4.3.3 Performance Parameters of GaN HEMT Chips
4.4 GaN HEMT chip performance improvement technology on Si Substrate
4.4.1 Difficulties faced in improving the performance of GaN HEMT chips Epitaxial Grown on Si Substrate
4.4.2 Heteroepitaxial Structure Control Technology
4.4.3 Key Technologies of GaN HEMT Chips Epitaxial Grown on Si Substrate
4.5 Application and Development Trends of GaN HEMT Chips on Epitaxial Grown on Si Substrate
4.5.1 Application and Development Trends of Power Electronics
4.5.2 RF Applications and Development Trends Reference
5. GaN Schottky diode Epitaxial Grown on Si Substrate
5.1 Introduction
5.2 Principle and Performance Parameters of GaN SBD Epitaxial Grown on Si Substrate
5.2.1 Working Principle
5.2.2 Performance Parameters
5.3 Performance Control of GaN SBD Chips Epitaxial Grown on Si Substrate
5.3.1 Advantages and Bottlenecks of GaN SBD Chips Epitaxial Grown on Si Substrate
5.3.2 GaN SBD Chip Structure Design Epitaxial Grown on Si Substrate
5.3.3 Key Processes of GaN SBD Epitaxial Grown on Si Substrate
5.4 Application and Development Trends of GaN SBD Epitaxial Grown on Si Substrate
5.4.1 Power Management
5.4.2 RF Front End
5.4.3 Development Trends Reference
6. GaN Photodetector Chip Epitaxial Grown on Si Substrate
6.1 Introduction
6.2 Working Principle and Preparation Process of GaN Photodetector Chip Epitaxial Grown on Si Substrate
6.2.1 Working Principle of GaN Photodetector Chip Epitaxial Grown on Si Substrate
6.2.2 Performance Parameters of GaN Photodetector Chip Epitaxial Grown on Si Substrate
6.2.3 Preparation Process of GaN Photodetector Chip Epitaxial Grown on Si Substrates
6.3 Performance Control Technology for GaN Photodetector Chip Epitaxial Grown on Si Substrates 6.3.1 Bottlenecks Faced by GaN Photodetector Chip Epitaxial Grown on Si Substrates
6.3.2 Local Surface Plasmon Resonance Technology
6.3.3 New Heterojunction Technology
6.3.4 Low Dimensional Nanomaterial Technology
6.4 Application of GaN Photodetector Chip Epitaxial Grown on Si Substrate
6.4.1 Optical Communication
6.4.2 Optical Imaging Reference
7. GaN Photoelectrolysis Chip Epitaxial Grown on Si Substrates
7.1 Introduction
7.2 Working Principle and Structural Parameters of GaN Photoelectrode Water Chip Epitaxial Grown on Si Substrates
7.2.1 Working Principle of Photoelectric Water Splitting Chip
7.2.2 Structure of GaN Photoelectrode Water Chip Epitaxial Grown on Si Substrate
7.2.3 Performance Parameters of GaN Photoelectrode Water Chip Epitaxial Grown on Si Substrate
7.3 Development Significance of GaN Photoelectrochemical Water Splitting Chip Epitaxial Grown on Si Substrate
7.3.1 Advantages of GaN Photoelectrochemical Water Splitting Chip on Si Substrate
7.3.2 Bottlenecks Faced by GaN Photoelectrolysis Chips on Si Substrate
7.4 Preparation and Performance of GaN Photoelectrolysis Chips on Si Substrate
7.4.1 Preparation Process of GaN Photoelectrode Water Chips on Si Substrate
7.4.2 Low Mismatch Epitaxial Technology
7.4.3 Doping Engineering
7.4.4 Heterojunction Engineering
7.4.5 Surface Modification Technology Application of
7.5 GaN Photoelectrode Water Chip Epitaxial Grown on Si Substrate
7.5.1 Decomposition of Pollutants
7.5.2 Seawater Electrolysis
7.5.3 Pv-Pec Coupling Reference
8. GaN Integrated Chips on Si Substrate
8.1 Introduction
8.2 Working Principle and Process of GaN Integrated Chips on Si Substrate
8.3 Advantages and Applications of GaN Integrated Chips on Si Substrate
8.3.1 GaN Digital Chips Integrated on Si Substrate
8.3.2 GaN Simulation Chips Integrated on Si Substrate
8.4 Development Trends of GaN Integrated Chips on Si Substrate References
Detalles del producto
Detalles del producto
- Edición: 1
- Última edición
- Publicado: 1 de noviembre de 2026
- Idioma: Inglés
Sobre el autor
Sobre el autor
GL
Guoqiang Li
Professor Li is based at the State Key Laboratory of Luminescent Materials and Devices, South China University of Technology. From 2007 to 2010, funded by the Royal Society in the UK, he carried out independent research at the University of Oxford as a Royal Society scholar. In 2010, he joined South China University of Technology as a professor and doctoral supervisor.
Professor Li has been deeply involved in the field of Si-based GaN epitaxial materials, chips, and devices for over 25 years
Afiliaciones y experiencia
South China University of Technology, China