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Germanium Silicon: Physics and Materials

  • 1 Edición, Volumen 56 - 9 de noviembre de 1998
  • Última edición
  • Editores: R. K. Willardson, John C. Bean, Eicke R. Weber, Robert Hull
  • Idioma: Inglés

Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known author… Leer más

Descripción

Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition will be maintained and even expanded.
Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry.

De interès para

Researchers, graduate students, and practitioners in materials science (electronic materials field) and electrical engineering (field of electronic devices).

Índice

J.C. Bean, Growth Techniques and Procedures. R. Hull, Misfit Strain Accommodation in SiGe Heterostructures. M.J. Shaw and M. Jaros, Fundamental Physics of Strained Layer GeSi: Quo Vadis? F. Cerdeira, Optical Properties. S.A. Ringel and P.N. Grillot, Electronic Properties and Deep Levels in Germanium-Silicon. J.C. Campbell, Optical Applications. K. Eberl, K. Brunner, and O.G. Schmidt, Si1-yCy and Si1-x-yGexCy Alloy Layers. Subject Index.

Detalles del producto

  • Edición: 1
  • Última edición
  • Volumen: 56
  • Publicado: 9 de noviembre de 1998
  • Idioma: Inglés

Sobre los editores

RW

R. K. Willardson

Afiliaciones y experiencia
WILLARDSON CONSULTING SPOKANE, WASHINGTON

JB

John C. Bean

Afiliaciones y experiencia
University of Virginia, Charlottesville

EW

Eicke R. Weber

Afiliaciones y experiencia
Fraunhofer-Institut für Solare Energiesysteme ISE, Freiburg, Germany

RH

Robert Hull

Afiliaciones y experiencia
University of Virginia, Charlottesville

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