High Power Insulated-gate Bipolar Transistor (IGBT) Drivers

Design and Applications

1 Edición - 1 de noviembre de 2026
Última edición
Autores: He Zhiyuan, Ke Jinkun
Idioma: Inglés

High Power Insulated-gate Bipolar Transistor (IGBT) Drivers: Design and Applications presents the latest developments in IGBT driver technology, drawing upon the author… Leer más

Descripción

High Power Insulated-gate Bipolar Transistor (IGBT) Drivers: Design and Applications presents the latest developments in IGBT driver technology, drawing upon the authors’ extensive experience and authority within the field. The book fills the gap in the market for a reference resource specifically addressing IGBT driver development and implementation. The book combines current theory with practical, real-world case studies, to enhance readers’ understanding of IGBT driver technology. Detailed sections in the book on the principles of circuits and control will have particular appeal for academic readers. Engineers will find the systematic presentation of driver circuit reliability and testing methods especially useful. The book enables readers to design a high-reliability IGBT driver capable of managing high-voltage and high-power applications and able to resist strong electromagnetic interference. Provides readers with robust technical support for the engineering application of high-voltage and high-power IGBT drivers. Driver implementation and test methodologies are described in detail, together with a wide range of application scenarios.

High Power Insulated-gate Bipolar Transistor (IGBT) Drivers is a comprehensive theoretical and practical reference resource for IGBT industry professionals and researchers.

Puntos claves

Integrates the theory of power electronics with the authors’ extensive experience of high-power IGBT driver engineering design and application
Provides a detailed description of control and protection mechanisms, balanced with a practical view of the challenges and solutions to IGTB design and application
Theory and design guidance are enhanced by detailed technical support on control strategies, reliability improvement, testing and validation schemes
Operational parameters in a wide range of application scenarios are discussed
Addresses the lack of reference resources specifically concerned with IGBT drivers

De interès para

Researchers and university lecturers and students engaged in the design and application of IGBT drives

Índice

1. Overview

1.1. Introduction to IGBT ·

1.2. Introduction to IGBT drivers ·

1.3. Typical applications

2. Electrical characteristics of IGBT modules ·

2.1. Diode characteristics

2.2. IGBT characteristics

2.3. Parameter analysis of IGBT module datasheet

2.4. Loss calculation ·

2.5. Thermal calculation

2.6. Stray Inductor

2.7. Dead zone calculation

2.8. Failure analysis

3. Drive design

3.1. Signal isolation

3.2. Research on gate drive characteristics

3.3. Isolating power supplies

3.4. Gate drive circuit

3.5. Detection and protection circuits

3.6. Communication functions

3.7. Mounting styles

4. IGBT multi-device drive control technology

4.1. Tandem

4.2. Parallel

5. Drive reliability design

5.1. Circuit reliability design

5.2. Driver insulation design

5.3. Components

5.4. Redundant design

5.5. Thermal design

5.6. EMC design

5.7. PCB routing design

5.8. Software reliability technology

6. Drive test and test

6.1. Functional test

6.2. Dynamic characteristics test

6.3. Protective characteristics test

6.4. Environmental testing

6.5. Electromagnetic compatibility test

6.6. Power operation test

7. High-power IGBT driver application cases

7.1. Flexible DC transmission converter valve driver case

7.2. DC circuit breaker driver case

7.3. Three-level converter driver case

7.4. Other applications

7.5. Analysis of problems occurring in high-voltage DC engineering drives References

Detalles del producto

Edición: 1
Última edición
Publicado: 1 de noviembre de 2026
Idioma: Inglés

Sobre los autores

He Zhiyuan

Dr He Zhiyuan is a professor-level senior engineer; he is currently the Vice Dean of China Electric Power Research Institute Co., Ltd., the director of the National Key Laboratory of "Advanced Transmission Technology", a senior member of the Chinese Institute of Electrical Engineering, a member of the China National Committee of CIGRE and the Standard Committee of Power Electronic Devices for Power Systems of the China Electricity Federation

Afiliaciones y experiencia

China Electric Power Research Institute Co., Ltd, China

Ke Jinkun

Ke Jinkun, professor-level senior engineer, works at China Electric Power Research Institute Co., Ltd.; he has been engaged in the research and development of high-voltage power semiconductor control chip technology, real-time control technology, and DC transmission technology for many years. He is the chairman of the global technical group of IPC-9207 "IGBT Product Application Reliability Test Method". He has led the development of 30 kinds of central control boards, power boards, and drivers suitable for flexible DC, high-voltage circuit breakers, and CLCC, which have been successfully applied to dozens of major projects such as State Grid Xiamen Flex, Zhoushan Flex, Chongqing-Hubei DC Networking, Zhangbei DC Power Grid, South Grid Wudongde Multi-terminal Flex, and Three Gorges Rudong Offshore Wind Power