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Elsevier

Semiconductor Materials for Optoelectronics and LTMBE Materials

Proceedings: Symposium A: Semiconductor Materials for Optoelectronic Devices/OEICs/Photonics and Symposium B: Low Temperature Molecular Beam Epitaxial III–V Materials: Physics/Applications of 1993 E-MRS Spring Conference Strasbourg, France, May 4–7, 1993

  • 1 Edición, Volumen 40 - 21 de diciembre de 1993
  • Última edición
  • Editores: J.P. Hirtz, C. Whitehouse, H.P. Meier, H.J. von Bardeleben, M.O. Manasreh
  • Idioma: Inglés

These three day symposia were designed to provide a link between specialists from university or industry who work in different fields of semiconductor optoelectronics. Symposium A… Leer más

Descripción

These three day symposia were designed to provide a link between specialists from university or industry who work in different fields of semiconductor optoelectronics. Symposium A dealt with topics including: epitaxial growth of III-V, II-VI, IV-VI, Si-based structures; selective-area, localized and non-planar epitaxy, shadow-mask epitaxy; bulk and new optoelectronic materials; polymers for optoelectronics.

Symposium B dealt with III-V epitaxial layers grown by low temperature molecular beam epitaxy, a subject which has undergone rapid development in the last three years.

Índice

Part I: Symposium A on Semiconductor Materials for Optoelectronic Devices, OEICs and Photonics. Preface. Epitaxy for optoelectronic applications. Quantum size structures. Optoelectronic devices. Strained and mismatched structures. Interdiffusion and ion implantation. New devices and integration of devices. Optoelectronics on silicon. Bulk III-V crystals and new optoelectronic materials. Author index. Subject index.

Part II: Symposium B on Low Temperature Molecular Beam Epitaxial III-V Materials: Physics and Applications. Invited papers: LTMBE GaAs: present status and perspectives (G.L. Witt). Point defects in III-V materials grown by molecular beam epitaxy at low temperature (P. Hautojärvi et al.). GaAs, AlGaAs and InGaAs epilayers containing As clusters: semimetal/semiconductor composites (M.R. Melloch et al.). Extended defects and precipitates in LT-GaAs, LT-InAlAs and LT-InP (A. Claverie, Z. Liliental-Weber). Optoelectronic applications of LTMBE III-V materials (J.F. Whitaker). Applications of GaAs grown at a low temperature by molecular beam epitaxy (U.K. Mishra)

Detalles del producto

  • Edición: 1
  • Última edición
  • Volumen: 40
  • Publicado: 29 de julio de 2016
  • Idioma: Inglés

Sobre los editores

JH

J.P. Hirtz

Afiliaciones y experiencia
Thomson-CSF, Orsay, France

CW

C. Whitehouse

Afiliaciones y experiencia
Defense Research Agency, Great Malvern, UK

HM

H.P. Meier

Afiliaciones y experiencia
Rüschlikon, Switzerland

Hv

H.J. von Bardeleben

Afiliaciones y experiencia
Universités Paris 6 & 7, Paris, France

MM

M.O. Manasreh

Afiliaciones y experiencia
Wright Laboratory, Dayton, OH, USA

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