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Elsevier

Semiconductor Silicon Crystal Technology

  • 1 Edición - 1 de febrero de 1989
  • Última edición
  • Editor: Fumio Shimura
  • Idioma: Inglés

Semiconductor Silicon Crystal Technology provides information pertinent to silicon, which is the dominant material in the semiconductor industry. This book discusses the technology… Leer más

Descripción

Semiconductor Silicon Crystal Technology provides information pertinent to silicon, which is the dominant material in the semiconductor industry. This book discusses the technology of integrated circuits (ICs) in electronic materials manufacturer. Comprised of eight chapters, this book provides an overview of the basic science, silicon materials, IC device fabrication processes, and their interaction for enhancing both the processes and materials. This text then proceeds with a discussion of the atomic structure and bonding mechanisms in order to understand the nature and formation of crystal structures, which are the fundamentals of material science. Other chapters consider the technological crystallography and classify natural crystal morphologies based on observation. The final chapter deals with the interrelationships among silicon material characteristics, circuit design, and IC fabrication in order to ensure the fabrication of very-large-scale-integration/ultra-large-scale-integration circuits. This book is a valuable resource for graduate students, physicists, engineers, materials scientists, and professionals involved in semiconductor industry.

Índice


Preface


1. Introduction


2. Atomic Structure and Chemical Bonds

2.1 Atomic Structure

2.2 Chemical Bond

References


3. Basic Crystallography

3.1 Solid-State Structure

3.2 X-Ray and Electron Diffraction

3.3 Properties of Silicon Crystal

3.4 Crystal Defects

References


4. Basic Semiconductor Physics

4.1 Semiconductors

4.2 Electrical Conductivity

4.3 Electronic Device Physics

4.4 Transistors

References


5. Silicon Crystal Growth and Wafer Preparation

5.1 Starting Materials

5.2 Single Crystal Growth

5.3 Impurities

5.4 New Crystal Growth Methods

5.5 Wafer Shaping Process and Wafer Properties

5.6 Silicon Epitaxy

References


6. Crystal Characterization

6.1 Electrical Characterization

6.2 Chemical Characterization

6.3 Physical Characterization

References


7. Grown-In and Process-Induced Defects

7.1 Grown-In Defects

7.2 Process-Induced Defects

7.3 Effects of Defects on Electrical Properties

7.4 Gettering

References


8. Silicon Wafer Criteria for VLSI/ULSI Technology

8.1 High-Technology Silicon Wafer Concept

8.2 VLSI/ULSI Wafer Characteristics

8.3 Concluding Remarks

References

Appendixes

Index

Detalles del producto

  • Edición: 1
  • Última edición
  • Publicado: 1 de febrero de 1989
  • Idioma: Inglés

Sobre el editor

FS

Fumio Shimura

Afiliaciones y experiencia
Shizuoka Institute of Science and Technology

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