SiC Materials and Devices
- 1 Edición, Volumen 52 - 2 de julio de 1998
- Última edición
- Editores: R. K. Willardson, Eicke R. Weber
- Idioma: Inglés
This volume addresses the subject of materials science, specifically the materials aspects, device applications, and fabricating technology of… Leer más
Descripción
Descripción
This volume addresses the subject of materials science, specifically the materials aspects, device applications, and fabricating technology of SiC.
De interès para
De interès para
AUDIENCE: Researchers, graduate students, and practitioners in materials science (electronic materials field) and electrical engineering (field of electronic devices).
Índice
Índice
K. Jarrendahl and R.F. Davis, Materials Properties and Characterization of SiC. V.A. Dmitriev and M.G. Spencer, SiC Fabrication Technology: Growth and Doping. V. Saxena and A.J. Steckl, Silicon Carbide Materials and Devices. M. Shur, SiC Transistors. C.D. Brandt, R.C. Clarke, R.R. Siergiej, J.B. Casady, and A.W. Morse, SiC for Applications in High Power Electronics. R.J. Trew, SiC Microwave Devices. C. Carter, J. Edmond, H. Kong, G. Negley, M. Leonard, K. Doverspike, W. Weeks, A. Suvorov, and D. Waltz, SiC-Based UV Photodiodes and Light Emitting Diodes. H. Morkoc, Beyond Silicon Carbide! II-V Nitride Based Heterostructures and Devices. Subject Index.
Detalles del producto
Detalles del producto
- Edición: 1
- Última edición
- Volumen: 52
- Publicado: 4 de agosto de 2011
- Idioma: Inglés
Sobre los editores
Sobre los editores
RW
R. K. Willardson
Afiliaciones y experiencia
WILLARDSON CONSULTING SPOKANE, WASHINGTONEW
Eicke R. Weber
Afiliaciones y experiencia
Fraunhofer-Institut für Solare Energiesysteme ISE, Freiburg, GermanyVer libro en ScienceDirect
Ver libro en ScienceDirect
Lee SiC Materials and Devices en ScienceDirect