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SiC Materials and Devices

  • 1 Edición, Volumen 52 - 2 de julio de 1998
  • Última edición
  • Editores: R. K. Willardson, Eicke R. Weber
  • Idioma: Inglés

This volume addresses the subject of materials science, specifically the materials aspects, device applications, and fabricating technology of… Leer más

Descripción

This volume addresses the subject of materials science, specifically the materials aspects, device applications, and fabricating technology of SiC.

De interès para

AUDIENCE: Researchers, graduate students, and practitioners in materials science (electronic materials field) and electrical engineering (field of electronic devices).

Índice

K. Jarrendahl and R.F. Davis, Materials Properties and Characterization of SiC. V.A. Dmitriev and M.G. Spencer, SiC Fabrication Technology: Growth and Doping. V. Saxena and A.J. Steckl, Silicon Carbide Materials and Devices. M. Shur, SiC Transistors. C.D. Brandt, R.C. Clarke, R.R. Siergiej, J.B. Casady, and A.W. Morse, SiC for Applications in High Power Electronics. R.J. Trew, SiC Microwave Devices. C. Carter, J. Edmond, H. Kong, G. Negley, M. Leonard, K. Doverspike, W. Weeks, A. Suvorov, and D. Waltz, SiC-Based UV Photodiodes and Light Emitting Diodes. H. Morkoc, Beyond Silicon Carbide! II-V Nitride Based Heterostructures and Devices. Subject Index.

Detalles del producto

  • Edición: 1
  • Última edición
  • Volumen: 52
  • Publicado: 4 de agosto de 2011
  • Idioma: Inglés

Sobre los editores

RW

R. K. Willardson

Afiliaciones y experiencia
WILLARDSON CONSULTING SPOKANE, WASHINGTON

EW

Eicke R. Weber

Afiliaciones y experiencia
Fraunhofer-Institut für Solare Energiesysteme ISE, Freiburg, Germany

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