Silicon Epitaxy
- 1 Edición, Volumen 72 - 26 de septiembre de 2001
- Última edición
- Editores: J. A. Rossi, Danilo Crippa, Daniel L. Rode, R. K. Willardson, Eicke R. Weber
- Idioma: Inglés
Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known author… Leer más
Descripción
Descripción
Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The Willardson and Beer series, as it is widely known, has succeeded in producing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition will be maintained and even expanded.
De interès para
De interès para
Researchers, graduate students, and practitioners working in the semiconductor field both at universities and in industry.
Índice
Índice
1: CVD Technologies for Silicon: A Quick Survey
2: Epitaxial Growth Theory: Vapor-Phase Chemistry and Doping
3: Epitaxial Growth Facilities, Equipment, and Supplies
4: Epitaxial Growth Techniques
5: Epitaxial Growth Techniques: Molecular Beam Epitaxy
6: Epitaxial Growth Modeling
7: Epitaxial Layer Characterization and Metrology
8: Epitaxy for Discretes and Power Devices
9: Epitaxy on Patterned Wafers
10: Si-Based Alloys: SiGe and SiGe:C
11: Silicon Epitaxy: New Applications
2: Epitaxial Growth Theory: Vapor-Phase Chemistry and Doping
3: Epitaxial Growth Facilities, Equipment, and Supplies
4: Epitaxial Growth Techniques
5: Epitaxial Growth Techniques: Molecular Beam Epitaxy
6: Epitaxial Growth Modeling
7: Epitaxial Layer Characterization and Metrology
8: Epitaxy for Discretes and Power Devices
9: Epitaxy on Patterned Wafers
10: Si-Based Alloys: SiGe and SiGe:C
11: Silicon Epitaxy: New Applications
Detalles del producto
Detalles del producto
- Edición: 1
- Última edición
- Volumen: 72
- Publicado: 26 de septiembre de 2001
- Idioma: Inglés
Sobre los editores
Sobre los editores
DC
Danilo Crippa
Afiliaciones y experiencia
LPE Epitaxial Technology, ItalyDR
Daniel L. Rode
Afiliaciones y experiencia
Washington University, St. Louis, Missouri, U.S.A.RW
R. K. Willardson
Afiliaciones y experiencia
WILLARDSON CONSULTING SPOKANE, WASHINGTONEW
Eicke R. Weber
Afiliaciones y experiencia
Fraunhofer-Institut für Solare Energiesysteme ISE, Freiburg, GermanyVer libro en ScienceDirect
Ver libro en ScienceDirect
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