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Silicon Epitaxy

  • 1 Edición, Volumen 72 - 26 de septiembre de 2001
  • Última edición
  • Editores: J. A. Rossi, Danilo Crippa, Daniel L. Rode, R. K. Willardson, Eicke R. Weber
  • Idioma: Inglés

Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known author… Leer más

Descripción

Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The Willardson and Beer series, as it is widely known, has succeeded in producing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition will be maintained and even expanded.

De interès para

Researchers, graduate students, and practitioners working in the semiconductor field both at universities and in industry.

Índice

1: CVD Technologies for Silicon: A Quick Survey

2: Epitaxial Growth Theory: Vapor-Phase Chemistry and Doping

3: Epitaxial Growth Facilities, Equipment, and Supplies

4: Epitaxial Growth Techniques

5: Epitaxial Growth Techniques: Molecular Beam Epitaxy

6: Epitaxial Growth Modeling

7: Epitaxial Layer Characterization and Metrology

8: Epitaxy for Discretes and Power Devices

9: Epitaxy on Patterned Wafers

10: Si-Based Alloys: SiGe and SiGe:C

11: Silicon Epitaxy: New Applications

Detalles del producto

  • Edición: 1
  • Última edición
  • Volumen: 72
  • Publicado: 26 de septiembre de 2001
  • Idioma: Inglés

Sobre los editores

DC

Danilo Crippa

Afiliaciones y experiencia
LPE Epitaxial Technology, Italy

DR

Daniel L. Rode

Afiliaciones y experiencia
Washington University, St. Louis, Missouri, U.S.A.

RW

R. K. Willardson

Afiliaciones y experiencia
WILLARDSON CONSULTING SPOKANE, WASHINGTON

EW

Eicke R. Weber

Afiliaciones y experiencia
Fraunhofer-Institut für Solare Energiesysteme ISE, Freiburg, Germany

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