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Silicon Integrated Circuits

Advances in Materials and Device Research

  • 1 Edición - 19 de junio de 1981
  • Última edición
  • Editor: Dawon Kahng
  • Idioma: Inglés

Silicon Integrated Circuits, Part B covers the special considerations needed to achieve high-power Si-integrated circuits. The book presents articles about the most important… Leer más

Descripción

Silicon Integrated Circuits, Part B covers the special considerations needed to achieve high-power Si-integrated circuits. The book presents articles about the most important operations needed for the high-power circuitry, namely impurity diffusion and oxidation; crystal defects under thermal equilibrium in silicon and the development of high-power device physics; and associated technology. The text also describes the ever-evolving processing technology and the most promising approaches, along with the understanding of processing-related areas of physics and chemistry. Physicists, chemists, and engineers involved in silicon integrated circuits will find the book invaluable.

Índice


List of Contributors

Preface

Physics and Chemistry of Impurity Diffusion and Oxidation of Silicon

I. Introduction

II. Theory of Group III and V Impurity Diffusion in Silicon

III. Thermal Oxidation of Silicon

IV. Impurity Diffusion and Defect Growth in Oxidizing Ambients

References

Silicon Power Field Controlled Devices and Integrated Circuits

I. Introduction

II. Silicon Material Limitations

III. Breakdown Phenomena

IV. Junction Gate Field Effect Transistors

V. MOS Gate Field Effect Transistor

VI. Field Controlled Diodes

VII. Power Integrated Circuits

VIII. Recent Developments

References

Author Index

Subject Index




Detalles del producto

  • Edición: 1
  • Última edición
  • Publicado: 19 de junio de 1981
  • Idioma: Inglés

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